Semiconductor device

• Main Authors: SUZUKI AKIO, YAKUBO HIROTO, IKEDA TAKAYUKI, MIYATA SHOKI
• Format: Patent
• Language: Chinese; English
• Published: 02.12.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device of a novel structure is provided. The semiconductor device includes a current-to-voltage conversion unit, a current switching unit, a voltage-to-current conversion unit, and a control unit. The current switching section includes a first transistor. The voltage-current conversion section includes a second transistor. The control section includes a third transistor. The first transistor includes an oxide semiconductor in a channel formation region. The second transistor includes a nitride semiconductor in a channel formation region. The third transistor includes silicon in a channel formation region. The first transistor is disposed on the first substrate. The second transistor and the third transistor are arranged on the second substrate. 提供一种新颖结构的半导体装置。该半导体装置包括电流电压转换部、电流开关部、电压电流转换部以及控制部。电流开关部包括第一晶体管。电压电流转换部包括第二晶体管。控制部包括第三晶体管。第一晶体管在沟道形成区域包含氧化物半导体。第二晶体管在沟道形成区域包含氮化物半导体。第三晶体管在沟道形成区域包含硅。第一晶体管设置于第一衬底上。第二晶体管及第三晶体管设置于第二衬底上。