Reading circuit and reading method of RRAM (Resistive Random Access Memory) array

The invention relates to an RRAM array reading circuit and a reading method, belongs to the technical field of semiconductor memories, and solves the problems that in the prior art, a reference unit enables an RRAM chip to be larger in area, higher in cost, larger in power consumption and poor in RR...

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Bibliographic Details
Main Authors XU XIAOXIN, DONG DANIAN, FAN SHAOYANG, ZHENG XU, LAI JINRU, SUN WENXUAN, YU JIE, PANG WAN
Format Patent
LanguageChinese
English
Published 02.12.2022
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:The invention relates to an RRAM array reading circuit and a reading method, belongs to the technical field of semiconductor memories, and solves the problems that in the prior art, a reference unit enables an RRAM chip to be larger in area, higher in cost, larger in power consumption and poor in RRAM reliability. The RRAM array reading circuit comprises an RRAM array, a word line control unit, a bit line source line control unit, a multiplexing selector and an amplification inverting unit, the source line of each RRAM unit in the RRAM array is used for inputting a reading voltage; each word line is connected with a word line control unit; the word line control unit and the bit line source line control unit are used for decoding external input signals; the multiplexing selector is used for selecting an output voltage signal of a unit to be read in the array and transmitting the output voltage signal to the amplifying and inverting unit; and a plurality of paths of amplifying and inverting units are used for d
Bibliography:Application Number: CN202211155763