Semiconductor structure and manufacturing method thereof

• Main Authors: DENG ZONGWEI, LI CHUNXIAO
• Format: Patent
• Language: Chinese; English
• Published: 18.11.2022
• Subjects: ELECTRICITY

The embodiment of the invention discloses a semiconductor structure and a manufacturing method thereof, and the manufacturing method comprises the steps: providing a substrate which comprises an array region, a peripheral region and a transition region located between the array region and the peripheral region; etching the substrate located in the array region, forming a first groove structure in the array region, and defining a plurality of first active regions separated from each other in the substrate and initial active regions located in the transition region and the peripheral region by the first groove structure, at least part of the first active regions are in contact with the initial active region in the transition region; and etching the initial active region located in the transition region, forming a second groove on one side, close to the peripheral region, of the transition region, and keeping the unetched initial active region on one side, close to the array region, of the transition region as a