Preparation method of semiconductor device and semiconductor device
The invention relates to a preparation method of a semiconductor device and the semiconductor device. The method comprises the following steps: forming a first groove in a first semiconductor material layer; forming an oxide layer, wherein the oxide layer covers the side wall and the bottom wall of...
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Main Authors | , , |
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Format | Patent |
Language | Chinese English |
Published |
15.11.2022
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Subjects | |
Online Access | Get full text |
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Summary: | The invention relates to a preparation method of a semiconductor device and the semiconductor device. The method comprises the following steps: forming a first groove in a first semiconductor material layer; forming an oxide layer, wherein the oxide layer covers the side wall and the bottom wall of the first groove and does not fill the first groove; the oxide layer comprises a first part located on the side wall of the first groove and a second part located on the bottom wall of the first groove; the first part is thicker than the second part; etching by taking the oxide layer as a mask layer, and removing a part of the first part, all the second part and a part of the first semiconductor material layer exposed by the second part, so that the bottom surface of the first groove extends downwards to form a second groove, and the line width of the second groove is smaller than that of the first groove; and doping a conductive material with a preset thickness into the first semiconductor material layer from the |
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Bibliography: | Application Number: CN202211007717 |