In-situ wafer thickness and gap monitoring using penetrating beam laser sensors

• Main Authors: HUANG GONGHENG, VAN SELOW ANTHONY PAUL, HUA XUEFENG, TORRES DANIEL, CHEN, JACK
• Format: Patent
• Language: Chinese; English
• Published: 11.11.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MEASURING; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS; PHYSICS; SEMICONDUCTOR DEVICES; TESTING

A system for determining a thickness of a substrate disposed in a processing chamber includes: an emitter configured to emit a signal toward a gap between the substrate and a component of the processing chamber, where the component is disposed above the substrate; a receiver configured to receive at least a portion of the transmitted signal and to generate a measurement signal based on a characteristic of the portion of the received signal; and a system controller configured to receive the measurement signal and to determine the thickness of the substrate based on a relationship between a value of the measurement signal and at least one of the thickness of the substrate, a width of the gap between the substrate and the component of the processing chamber, and an adjustment amount of the parameter of the processing chamber. And selectively adjusting the parameters of the processing chamber. 一种用于确定在处理室中所设置的衬底的厚度的系统包括：发射器，其被配置成将信号朝向所述衬底与所述处理室的部件之间的间隙发射，其中所述部件被设置在所述衬底上方；接收器，其被配置成接收所发射的所述信号的至少一部分，并基于所接收的所述信号的所述部分的