LAMINATED FILM, STRUCTURE INCLUDING LAMINATED FILM, SEMICONDUCTOR ELEMENT, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING LAMINATED

• Main Authors: SUEMOTO YUYA, UEOKA YOSHIHIRO, MESUDA MASAMI
• Format: Patent
• Language: Chinese; English
• Published: 11.11.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Provided are a crack-free laminated film and a structure comprising the same. The laminated film includes a buffer layer and at least one gallium nitride film disposed on the buffer layer. In addition, the compressive stress of the entire laminated film is-2.0 GPa or more and 5.0 GPa or less. 提供无裂纹的层叠膜和包含该层叠膜的结构体。该层叠膜包含缓冲层和配置在前述缓冲层之上的至少1层的氮化镓系膜。另外，层叠膜整体的压缩应力为-2.0GPa以上且5.0GPa以下。