RF ACOUSTIC RESONATOR INTEGRATED WITH HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING COMMON

• Main Authors: MOY CRAIG, SHELLEY, JEFFREY, B, WINTERS MARY
• Format: Patent
• Language: Chinese; English
• Published: 01.11.2022
• Subjects: ELECTRICITY

An RF integrated circuit device may include a substrate and a high electron mobility transistor (HEMT) device on the substrate, the HEMT device including an ScAlN layer configured to provide a buffer layer of the HEMT device to define formation of a 2DEG channel region of the HEMT device. The RF piezoelectric resonator device may be on a substrate comprising an ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device. 一种RF集成电路器件，可以包括衬底和在衬底上的高电子迁移率晶体管(HEMT)器件，该HEMT器件包括ScAlN层，该ScAlN层被配置为提供HEMT器件的缓冲层以限定HEMT器件的2DEG沟道区的形成。RF压电谐振器器件可在包括夹在RF压电谐振器器件的顶部电极与底部电极之间的ScAlN层的衬底上，以为RF压电谐振器器件提供压电谐振器。