Light-emitting diode epitaxial wafer capable of improving internal quantum efficiency and preparation method of light-emitting diode epitaxial wafer

• Main Authors: LI PENG, CHEN-ZHANG XIAOXIONG, GE YONGHUI, LU XIANGHUA, LI NING, JIA SHENGMIN
• Format: Patent
• Language: Chinese; English
• Published: 01.11.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a light-emitting diode epitaxial wafer for improving internal quantum efficiency and a preparation method thereof, and belongs to the field of light-emitting diode manufacturing. A p-type contact layer on the p-type GaN layer comprises a first aluminum gallium nitride layer, a second aluminum gallium nitride layer, a third aluminum indium gallium nitride layer, a fourth aluminum indium gallium nitride layer and a fifth indium gallium nitride layer which are stacked in sequence. The p-type contact layer which is large in thickness and has several times of barrier changes avoids the situation of current breakdown. The working voltage of the diode is reduced, and the energy consumption is reduced. And the current carriers can be more uniformly distributed in the P electrode region, so that the poor antistatic capability caused by non-uniform distribution of the current carriers is greatly reduced, and the reliability of the light-emitting diode light-emitting device is improved. And the d