Manufacturing method of semiconductor device and semiconductor device

• Main Author: YU SHAOXIN
• Format: Patent
• Language: Chinese; English
• Published: 01.11.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a manufacturing method of a semiconductor device and the semiconductor device. The manufacturing method of the semiconductor device comprises the following steps: providing a substrate; forming a thermal oxide layer covering the substrate; forming a photoresist layer with a preset pattern on a preset area of the thermal oxide layer; and etching the thermal oxide layer by taking the photoresist layer as a mask to obtain the field plate of which the contact surface with the substrate is a plane. The scheme can improve the performance of the semiconductor device. 本申请公开了一种半导体器件的制造方法及半导体器件，该半导体器件的制造方法包括:提供一基底；形成覆盖于基底上的热氧化层；在热氧化层的预设区域上形成具有预设图案的光阻层；以光阻层为掩膜对热氧化层进行蚀刻，从而得到与基底的接触面为平面的场板。本方案可以提高半导体器件的性能。