Crystal growth device and method and KDP (potassium dihydrogen phosphate) crystal

• Main Authors: LIU LIANG, LI XIAOPING, XU YUNFEI, LEI QI, LUO HONGZHI, GAN SHENGQUAN, LI JIANMIN, MAO WEI, HE LIANG, ZHANG CUNXIN, ZHOU CHENG, XIONG RENGEN
• Format: Patent
• Language: Chinese; English
• Published: 01.11.2022
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention discloses a crystal growth device and method and KDP crystals. The crystal growth device comprises a heat preservation box, a first water tank, a second water tank and a growth chamber. A containing cavity is defined by the heat preservation box. The first water tank, the second water tank and the growth chamber are arranged in the accommodating cavity, and the first water tank completely or partially surrounds the side surface of the growth chamber; the second water tank is arranged at the bottom of the growth chamber; the first water tank and the second water tank are provided with a water inlet and a water outlet; the upper end face of the growth chamber or the upper end faces of the growth chamber and the first water tank is provided with a heat-insulating cover. Through the temperature control mode of the double water tanks, the overall temperature control is more stable, defects in the crystallization process are reduced, and the crystal quality is improved. 本发明公开一种晶体生长装置和方法、KDP类晶体，晶体生长装置包