Method of singulating semiconductor workpiece

A method of singulating a semiconductor workpiece includes forming a separation zone within the semiconductor workpiece, where forming the separation zone includes modifying a semiconductor material of the semiconductor workpiece at a plurality of target locations within the separation zone in at le...

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Main Authors SWOBODA MATTHEW D, GRAF, HEIKO, ULLRICH ANDRE, BERNARD BENJAMIN, RIESKE RALF, STEFANELLI MARCO, BINTER ALEXANDER
Format Patent
LanguageChinese
English
Published 28.10.2022
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Summary:A method of singulating a semiconductor workpiece includes forming a separation zone within the semiconductor workpiece, where forming the separation zone includes modifying a semiconductor material of the semiconductor workpiece at a plurality of target locations within the separation zone in at least one physical property, modifying the semiconductor material in one of the target locations, including focusing at least two laser beams to the target location, to increase thermal mechanical stress within the separation zone relative to the remainder of the semiconductor workpiece; and applying an external force or stress to the semiconductor workpiece such that the at least one crack propagates along the separation zone and the semiconductor workpiece is divided into two separate workpieces. Additional workpiece segmentation techniques and techniques for compensating for workpiece deformations occurring during the segmentation process are also described. 一种分割半导体工件的方法,包括:在半导体工件内形成分离区带,其中,形成分离区带包括在至少一种物理性质方面在分离区
Bibliography:Application Number: CN202210450753