Group III HEMT and capacitor sharing structural features

• Main Authors: FISCHER, JU RG, JONES ERIC
• Format: Patent
• Language: Chinese; English
• Published: 25.10.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A high mobility electron transistor (HEMT) (10) and capacitors (14, 18, 20, 22, 24) jointly formed on the integrated circuit share at least one structural feature, thereby closely integrating the two components. In one embodiment, the shared feature may be a 2DEG channel of the HEMT (10), which also...