Group III HEMT and capacitor sharing structural features

• Main Authors: FISCHER, JU RG, JONES ERIC
• Format: Patent
• Language: Chinese; English
• Published: 25.10.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A high mobility electron transistor (HEMT) (10) and capacitors (14, 18, 20, 22, 24) jointly formed on the integrated circuit share at least one structural feature, thereby closely integrating the two components. In one embodiment, the shared feature may be a 2DEG channel of the HEMT (10), which also functions in place of a base metal layer of a conventional capacitor (12). In another embodiment, the dielectric layer of the capacitor (14, 18, 20, 22, 24) may be formed in a passivation step that forms the HEMT (10). In another embodiment, a metal contact (e.g., a source, gate, or drain contact) of the HEMT (10) includes a metal layer or contact of the capacitor (22). In these embodiments, one or more processing steps required to form a conventional capacitor (12) are eliminated by utilizing one or more processing steps that have been performed in the manufacture of the HEMT (10). 共同形成在集成电路上的高迁移率电子晶体管HEMT（10）和电容器（14、18、20、22、24）共享至少一个结构特征，由此紧密地集成两个组件。在一个实施例中，共享的特征可以是HEMT（10）的2DEG沟道，该2DEG沟道也代替常规电容器（12）的基底金属层起作用。在