Three-terminal memory transistor based on carbon nanotube and preparation method and use method thereof

• Main Authors: LIU JIA, GONG CHENRONG, ZHANG GUOHE, YU ZHOU, CHEN LIN
• Format: Patent
• Language: Chinese; English
• Published: 25.10.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a three-terminal memory transistor based on a carbon nanotube and a preparation method and a use method thereof, the three-terminal memory transistor comprises a substrate, a semiconductor channel is arranged on the substrate, a source electrode and a drain electrode are arran...