Three-terminal memory transistor based on carbon nanotube and preparation method and use method thereof

• Main Authors: LIU JIA, GONG CHENRONG, ZHANG GUOHE, YU ZHOU, CHEN LIN
• Format: Patent
• Language: Chinese; English
• Published: 25.10.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a three-terminal memory transistor based on a carbon nanotube and a preparation method and a use method thereof, the three-terminal memory transistor comprises a substrate, a semiconductor channel is arranged on the substrate, a source electrode and a drain electrode are arranged on the semiconductor channel, and dielectric layers are arranged on the source electrode and the drain electrode and in an area, between the source electrode and the drain electrode, of the semiconductor channel. A gate electrode is arranged on the dielectric layer; one side surface, far away from the semiconductor channel, of the source electrode and one side surface, far away from the semiconductor channel, of the drain electrode are both covered by a dielectric layer, and the source electrode and the drain electrode are connected through the semiconductor channel; and the semiconductor channel is made of a semiconductor type carbon nanotube. According to the invention, the heterosynaptic plasticity can be si