SiC MOSFET device and preparation method thereof

• Main Authors: SHENG KUANG, RAN FEIRONG, SHEN HUA, LIU ZHIHONG, REN NA
• Format: Patent
• Language: Chinese; English
• Published: 25.10.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a SiC MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device and a preparation method thereof in the technical field of semiconductors, and the SiC MOSFET device comprises a substrate layer, an epitaxial layer, more than two groups of gate oxide structures which are arranged at intervals, a first isolation layer, more than one group of first source electrode layers, a second source electrode layer and a gate electrode layer, the epitaxial layer is arranged on one end face of the substrate layer, the drain electrode layer is arranged on the other end face of the substrate layer, the gate-oxide structures are arranged on one end face, far away from the substrate layer, of the epitaxial layer, a first isolation layer is arranged on each group of gate-oxide structures, every two groups of continuous gate-oxide structures are arranged as a unit structure, and an injection layer and a source layer are only arranged between the two groups of gate-oxide structures in each unit stru