Semiconductor device and manufacturing method thereof

• Main Authors: ZENG JIANTING, HUANG JINGYU, PENG SHIWEI
• Format: Patent
• Language: Chinese; English
• Published: 21.10.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a first conductive pattern disposed within a first row from a plan view and extending along a first direction, a first phase shift circuit disposed within the first row, a first transfer circuit disposed within the second row from a plan view; and a first gate conductor extending from the first row to the second row along a second direction perpendicular to the first direction. The first phase shift circuit and the first transmission circuit are electrically connected to the first conductive pattern through the first gate conductor. 提供了一种半导体器件及其制造方法。该半导体器件包括从俯视角度看设置在第一行内并且沿着第一方向延伸的第一导电图案、设置在第一行内的第一相移电路、从俯视角度看设置在第二行内的第一传输电路以及沿着垂直于第一方向的第二方向从第一行延伸到第二行的第一栅极导体。第一相移电路和第一传输电路通过第一栅导体与第一导电图案电连接。