MEMORY COMPONENT AND METHOD OF MANUFACTURING THE SAME

• Main Author: WANG CONGXUAN
• Format: Patent
• Language: Chinese; English
• Published: 18.10.2022
• Subjects: ELECTRICITY

The invention provides a memory component and a manufacturing method thereof. The memory component comprises a substrate, a plurality of first stacked structures and a plurality of second stacked structures. The substrate includes an array region and a peripheral region. The first stack structure is disposed on the substrate in the array region. Each first stack structure sequentially comprises a first tunneling dielectric layer, a first floating gate, a first inter-gate dielectric layer, a first control gate, a first metal layer, a first top cover layer and a first stop layer. The second stack structure is disposed on the substrate in the peripheral region. Each second stack structure sequentially comprises a second tunneling dielectric layer, a second floating gate, a second inter-gate dielectric layer, a second control gate, a second metal layer, a second top cover layer and a second stop layer. The pattern density of the first stack structure is greater than the pattern density of the second stack structu