Multiple thermal CVD chambers with common gas delivery and exhaust system

• Main Authors: YE ZHIYUAN, CHU SCHUBERT S, WASHINGTON, LORI, HILKENE MARTIN A, MYO NYI O, LAU SHU-KWAN, COLLINS RICHARD O, BURROWS BRIAN H, DINIZ HERMAN, HEMKA, MANISH
• Format: Patent
• Language: Chinese; English
• Published: 14.10.2022
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Methods and apparatus for a process chamber for thermal processing are described herein. The process chamber is a dual process chamber and shares a chamber body. The chamber body includes a first set of gas injection channels and a second set of gas injection channels. The chamber body may also include a first set of exhaust ports and a second set of exhaust ports. The processing chamber may have a common gas panel and/or a common exhaust conduit. The processing chambers described herein enable simultaneous processing of multiple substrates with improved process gas flow and heat distribution. 本文描述了用于热处理的处理腔室的方法和设备。处理腔室是双处理腔室，并且共用腔室主体。腔室主体包括第一组气体注入通道和第二组气体注入通道。腔室主体还可包括第一组排气口和第二组排气口。处理腔室可具有共用的气体面板和/或共用的排气导管。本文描述的处理腔室能够以改进的处理气体流动和热分布同时处理多个基板。