High electron mobility transistor and forming method thereof

• Main Authors: SONG JUNHAN, XU RONGHAO, ZHANG JIAMING, LIAO YUAN
• Format: Patent
• Language: Chinese; English
• Published: 30.09.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a high electron mobility transistor and a forming method thereof. The high electron mobility transistor comprises a compound semiconductor substrate, a gate electrode, a source electrode, a drain electrode, a first metal column, a second metal column, a dielectric layer and a metal layer. And a gate electrode on the compound semiconductor substrate. The source electrode is located on the first side of the gate electrode on the compound semiconductor substrate. And a drain electrode on a second side of the gate electrode above the compound semiconductor substrate, the first side being opposite to the second side. The first metal column is located on the source electrode. The second metal column is located on the drain electrode. And a dielectric layer on the compound semiconductor substrate, the dielectric layer surrounding the gate electrode, the first metal pillar, and the second metal pillar. The metal layer is located on the dielectric layer, and the metal layer crosses the gate ele