SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

The embodiment of the invention mainly provides a semiconductor device which can improve reverse recovery characteristics of a built-in diode and is high in reliability and a manufacturing method thereof. According to one embodiment, a semiconductor device includes: an upper electrode; a lower elect...

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Bibliographic Details
Main Author OASA KOHEI
Format Patent
LanguageChinese
English
Published 27.09.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The embodiment of the invention mainly provides a semiconductor device which can improve reverse recovery characteristics of a built-in diode and is high in reliability and a manufacturing method thereof. According to one embodiment, a semiconductor device includes: an upper electrode; a lower electrode; a substrate located between the upper electrode and the lower electrode; an embedded electrode part located between the substrate and the upper electrode and having a gate electrode; and a silicon layer between the substrate and the upper electrode, the silicon layer having a mesa portion adjacent to the embedded electrode portion, a first region between the mesa portion and the substrate, and a second region between the embedded electrode portion and the substrate, the energy level density of the first region is higher than the energy level density of the second region. 实施方式主要提供一种既能提高内置二极管的反向恢复特性、可靠性又高的半导体装置及其制造方法。根据实施方式，半导体装置具备：上部电极；下部电极；衬底，位于所述上部电极和所述下部电极之间；埋入电极部，位于所述衬底和所述上部电极之间，具有栅极电极；以及硅层，位于所述衬底和所述上部电极之间
Bibliography:Application Number: CN202110861191