Manufacturing method of semiconductor device and semiconductor device

• Main Authors: STORBECK OLAF, KAMOUS ANDREAS
• Format: Patent
• Language: Chinese; English
• Published: 27.09.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method of forming a semiconductor device is presented. The method includes providing a semiconductor structure (102). The method further includes forming an auxiliary layer (104) directly on the portion of the semiconductor structure (102). Silicon and nitrogen are main components of the auxiliary layer (104). The method further includes forming a conductive material (106) on the auxiliary layer (104). The conductive material (106) includes AlSiCu, AlSi, or tungsten, and is electrically connected to the portion of the semiconductor structure (102) via the auxiliary layer (104). 提出了一种形成半导体器件的方法。该方法包括提供半导体结构（102）。该方法还包括直接在半导体结构（102）的部分上形成辅助层（104）。硅和氮是辅助层（104）的主要成分。该方法还包括在辅助层（104）上形成导电材料（106）。导电材料（106）包括AlSiCu、AlSi或钨，并且经由辅助层（104）电连接到半导体结构（102）的该部分。