Growth defect reduction at grating transitions

• Main Author: TSAI CURTIS S
• Format: Patent
• Language: Chinese; English
• Published: 09.09.2022
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

A semiconductor device is provided. In some embodiments, a semiconductor device includes a first layer having a first region and a second region, the first region being corrugated and having a plurality of corrugations, the second region being non-corrugated. A first cycle of the ripple may have a first duty cycle, and a second cycle of the ripple may have a second duty cycle between the first cycle and the second region, and the second duty cycle is between the first duty cycle and a duty cycle of the second region. 一种半导体装置。在一些实施方案中，半导体装置包括：具有第一区域和第二区域的第一层，所述第一区域为波纹状并具有多个波纹，所述第二区域无波纹。波纹的第一循环可以具有第一占空比，并且波纹的第二循环可以具有第二占空比，所述第二循环在第一循环与第二区域之间，并且第二占空比在第一占空比与第二区域的占空比之间。