Memory

• Main Authors: FENG LIWEI, YAN YIFEI
• Format: Patent
• Language: Chinese; English
• Published: 02.09.2022
• Subjects: ELECTRICITY

The invention provides a memory which is characterized in that a plurality of shielding patterns are formed on a substrate, at least part of the shielding patterns are located on a word line structure and extend to a word line groove filled with the remaining depth, and the shielding patterns can be used as a shielding layer on the substrate and a gate insulating layer for protecting the word line structure at the same time; compared with an existing memory forming method, the method has the advantages that the steps of removing a gate insulating layer and a gate dielectric layer on the substrate and forming a shielding layer on the substrate again can be omitted, so that the preparation process of the memory is simplified, the preparation efficiency is improved, and the performance of the memory cannot be influenced; moreover, parasitic capacitance between the conductive patterns can be reduced through the first air gap and the second air gap, and the performance of the memory is improved. 本发明提供了一种存储器，通过在所述衬