Semiconductor metrology method and semiconductor metrology system

• Main Authors: RABINOVICH, ILAN, TAL, NOAM, YOGOV SHAY, BREUTMAN, ARIEL, RABINOVICH ILYA, KIM YONG-HA, KANDEL DANIEL, BRANOWICZ, BAREK, COHEN, ODED, ROTSTEIN EITAN, ZAHARONI, TAL
• Format: Patent
• Language: Chinese; English
• Published: 02.09.2022
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CALCULATING; CINEMATOGRAPHY; COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS; COMPUTING; COUNTING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; MEASURING; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; TESTING

The invention relates to a semiconductor metrology method and a semiconductor metrology system. A semiconductor metrology system includes a spectrum acquisition tool for collecting a baseline scattering metric spectrum on a first semiconductor wafer target and various sources for spectral variability using a first metrology protocol, collecting a variability set of scattering metric spectrums on a second semiconductor wafer target, the variability set embodying the spectral variability; the reference measurement tool is used for collecting parameter values of the first semiconductor wafer target by using a second measurement protocol; and a training unit for training, using machine learning, a predictive model for predicting a value for the production semiconductor wafer target based on a spectrum of the production semiconductor wafer target using the aforementioned collected spectrum and value, and minimizing an associated loss function incorporating a spectral variability term. 本申请涉及半导体度量方法和半导体度量系统。半导体度量系统包