Gallium oxide longitudinal field effect transistor with integrated fly-wheel diode

• Main Authors: PENG XIAOSONG, DENG SIYU, WEI YUXI, LU JUAN, YANG KEMENG, SUN TAO, WEI JIE, LUO XIAORONG, JIANG ZHUOLIN
• Format: Patent
• Language: Chinese; English
• Published: 30.08.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention belongs to the technical field of power semiconductors, and relates to a gallium oxide longitudinal field effect transistor with an integrated fly-wheel diode. When the gate/source voltage is zero, the work function difference between the gate/source electrode metal and the gallium oxide semiconductor exhausts the conducting channel; along with the increase of the gate/source voltage, the depletion region is gradually narrowed until a high-concentration electron accumulation layer is formed on the side wall of the channel. Therefore, during forward conduction, the on-resistance can be reduced, and the forward current capability can be enhanced; during forward blocking, the leakage current of the field effect transistor is effectively reduced, the breakdown voltage of the device is improved, and the threshold voltage is improved; and when forward blocking or forward conduction is carried out, the integrated diode is in a turn-off state, and the conduction and voltage withstanding characteristics