Fluorine doping method for nanosheets

• Main Authors: HUANG MAOLIN, ZHAO HUANGLIN, LI XINYI, ZHU LONGKUN, XU ZHI'AN
• Format: Patent
• Language: Chinese; English
• Published: 30.08.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a fluorine doping method for nanosheets. The fluorine doping method comprises the following steps: forming a plurality of nanostructures on a substrate; etching the nano structures to form a groove; forming a source/drain region in the groove; removing a first nanostructure of the nanostructures, leaving a second nanostructure of the nanostructures; depositing a gate dielectric layer over and around the second nanostructure; depositing a protective material on the gate dielectric layer; performing fluorine treatment on the protective material; removing the protective material; depositing a first conductive material on the gate dielectric layer; and depositing a second conductive material on the first conductive material. 一种纳米片的氟掺入方法，包括以下步骤：在基板上形成多个纳米结构；蚀刻该些纳米结构以形成凹槽；在凹槽中形成源极/漏极区域；移除该些纳米结构的第一纳米结构，留下该些纳米结构的第二纳米结构；在第二纳米结构上方及周围沉积栅极介电层；在栅极介电层上沉积保护材料；对保护材料进行氟处理；移除保护材料；在栅极介电层上沉积第一导电材料；及在第一导电材料上沉积第二导电材料。