SEMICONDUCTOR MEMORY DEVICE

• Main Authors: IINO HIROMITSU, NOJIMA KAZUHIRO, TAKESHITA SHUNPEI, YAMAMOTO NAOKI
• Format: Patent
• Language: Chinese; English
• Published: 30.08.2022
• Subjects: ELECTRICITY

Embodiments provide a semiconductor memory device in which a step portion is easy to form. A semiconductor memory device (10) according to an embodiment is provided with: a lamination unit (100) in which a plurality of conductor layers (40) are laminated in a z direction; and a step section (200) for drawing out the plurality of conductor layers (40) in a step shape in the y direction. The step portion (200) includes a lower step portion (220) and an upper step portion (210). The upper step section (210) is formed such that the conductor layer (40) extends further toward one side in the y direction as the conductor layer (40) travels toward the lower step section (220) in the z direction. The lower step section (220) is formed on the opposite side from the one side in the y direction than the upper step section (210). 实施方式提供一种容易形成阶梯部的半导体存储装置。实施方式的半导体存储装置10具备：积层部100，将多个导电体层40沿z方向积层；及阶梯部200，将多个导电体层40沿y方向阶梯状引出。阶梯部200中包含着下侧阶梯部220与上侧阶梯部210。在上侧阶梯部210中，以沿z方向越朝下侧阶梯部220侧行进，导电体层40朝沿y方向的一侧延伸得越长的方式形成。下侧阶梯部220形成在比上侧阶梯部210