SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
Embodiments of the present application provide three-dimensional structures and methods in which a capacitor is formed separately from a first semiconductor device, which is then connected to the first semiconductor device. For example, a capacitor chip is provided and then bonded to a first semicon...
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Main Authors | , |
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Format | Patent |
Language | Chinese English |
Published |
30.08.2022
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Subjects | |
Online Access | Get full text |
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Summary: | Embodiments of the present application provide three-dimensional structures and methods in which a capacitor is formed separately from a first semiconductor device, which is then connected to the first semiconductor device. For example, a capacitor chip is provided and then bonded to a first semiconductor die. The capacitor chip and the first semiconductor die are encapsulated with a first encapsulant, and one of the capacitor chip and the first semiconductor die is thinned to expose the through hole. The embodiment of the invention also provides a semiconductor device and a manufacturing method thereof.
本申请的实施例提供了三维结构和方法,其中电容器与第一半导体器件分开形成,电容器然后连接到第一半导体器件。例如,提供电容器芯片,然后将其接合到第一半导体管芯。用第一密封剂密封电容器芯片和第一半导体管芯,并且减薄电容器芯片和第一半导体管芯中的一个以暴露贯通孔。本申请的实施例还提供了半导体器件及其制造方法。 |
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Bibliography: | Application Number: CN202210189577 |