SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

Embodiments of the present application provide three-dimensional structures and methods in which a capacitor is formed separately from a first semiconductor device, which is then connected to the first semiconductor device. For example, a capacitor chip is provided and then bonded to a first semicon...

Full description

Saved in:
Bibliographic Details
Main Authors CHEN XIANWEI, ZHENG XINPU
Format Patent
LanguageChinese
English
Published 30.08.2022
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:Embodiments of the present application provide three-dimensional structures and methods in which a capacitor is formed separately from a first semiconductor device, which is then connected to the first semiconductor device. For example, a capacitor chip is provided and then bonded to a first semiconductor die. The capacitor chip and the first semiconductor die are encapsulated with a first encapsulant, and one of the capacitor chip and the first semiconductor die is thinned to expose the through hole. The embodiment of the invention also provides a semiconductor device and a manufacturing method thereof. 本申请的实施例提供了三维结构和方法,其中电容器与第一半导体器件分开形成,电容器然后连接到第一半导体器件。例如,提供电容器芯片,然后将其接合到第一半导体管芯。用第一密封剂密封电容器芯片和第一半导体管芯,并且减薄电容器芯片和第一半导体管芯中的一个以暴露贯通孔。本申请的实施例还提供了半导体器件及其制造方法。
Bibliography:Application Number: CN202210189577