Quantum well bias and stress sensor

• Main Authors: ZHANG YAN, NIE JIAHENG, LIU RUHAO, ZENG KAIWEN
• Format: Patent
• Language: Chinese; English
• Published: 30.08.2022
• Subjects: MEASURING; MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE; PHYSICS; TESTING

The invention relates to a quantum well bias and stress sensor, and according to one aspect of the invention, a bias and stress sensor is provided, comprising: a substrate; a first electrode disposed on the substrate; a semiconductor buffer layer disposed on the first electrode; the first semiconductor doping layer is arranged on the semiconductor buffer layer; the first semiconductor isolation layer is arranged on the first semiconductor doping layer; the second semiconductor isolation layer is arranged on the first semiconductor isolation layer; the second semiconductor doping layer is arranged on the second semiconductor isolation layer; the second electrode is arranged on the second semiconductor doping layer; the piezoelectric semiconductor layer is arranged between the first semiconductor isolation layer and the second semiconductor isolation layer and can sense bias voltage and stress, and the quantum well is a semiconductor quantum well. 本发明提涉及量子阱偏压和应力传感器，并且根据本发明的一个方面，提供了偏压和应力传感器，其包括：基底；设置在所述基底上的第一电极；