Device structure

• Main Authors: LAI YINGYAO, CHEN DIANHAO, XIAO YUANYANG, SHEN XIANGGU, HSIAO TSUNGIEH
• Format: Patent
• Language: Chinese; English
• Published: 19.08.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a device structure. The device structure includes a structure, a first protection layer disposed on the structure, a buffer layer disposed on the first protection layer, a barrier layer disposed on a first portion of the buffer layer, and a redistribution layer disposed over the barrier layer. An adhesive layer disposed on the barrier layer and the side surface of the redistribution layer; and a second protective layer disposed on the second portion of the buffer layer. The second protective layer contacts the barrier layer, the adhesive layer, and the redistribution layer. 本公开提出一种装置结构。装置结构包含结构、设置于结构上的第一保护层、设置于第一保护层上的缓冲层、设置于缓冲层的第一部分上的阻挡层、设置于阻挡层上方的重布线层、设置于阻挡层上和重布线层的侧面上的粘着层以及设置于缓冲层的第二部分上的第二保护层。第二保护层接触阻挡层、粘着层和重布线层。