Tri-state programming of memory cells

• Main Authors: CASTRO HERNAN A, JAIN, SANJAY, K, MELTON WILLIAM A, HIRST JASON M, DODGE RICHARD K
• Format: Patent
• Language: Chinese; English
• Published: 12.08.2022
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

The present disclosure includes apparatuses, methods, and systems for tri-state programming of memory cells. Embodiments include a memory having a plurality of memory cells and circuitry configured to program a memory cell of the plurality of memory cells to one of three possible data states by applying a voltage pulse to the memory cell; determining whether the memory cell bursts back in response to the applied voltage pulse; and applying an additional voltage pulse to the memory cell based on the determination of whether the memory cell bursts back. 本公开包含用于存储器单元的三态编程的装置、方法和系统。实施例包含具有多个存储器单元的存储器和电路系统，所述电路系统配置成通过以下操作将所述多个存储器单元中的存储器单元编程为三个可能的数据状态中的一者：将电压脉冲施加到所述存储器单元；确定所述存储器单元是否响应于所述所施加电压脉冲而突返；及基于对所述存储器单元是否突返的确定而将额外电压脉冲施加到所述存储器单元。