Semiconductor device and forming method thereof

• Main Authors: XIA XINGGUO, YU ZHENHUA, DING GUOQIANG
• Format: Patent
• Language: Chinese; English
• Published: 09.08.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device and a method of forming a semiconductor device are provided. A method includes disposing a first material layer between a second material layer and a semiconductor substrate, and forming a first waveguide in the second material layer. The method also includes forming a photonic die over the first waveguide, and forming a first cavity in the semiconductor substrate and exposing the first layer. Once formed, the first cavity is filled with a first backfill material adjacent the first layer. The method further includes electrically coupling the electron die to the photonic die. Some methods include encapsulating a semiconductor device in a package assembly. 本发明实施例提供一种半导体装置及一种形成半导体装置的方法。一种方法包括在第二材料层与半导体衬底之间设置第一材料层，以及在第二材料层中形成第一波导。所述方法还包含在第一波导上方形成光子管芯，以及在半导体衬底中形成第一腔并暴露出第一层。一旦形成，就邻近第一层用第一回填材料填充第一腔。所述方法更包含将电子管芯电耦合到光子管芯。一些方法包含将半导体装置封装在封装组合件中。