Ultraviolet light detector and preparation method thereof

• Main Authors: LIU XINGZHAO, REN YIXUAN, WANG SIJIE, LING KANG
• Format: Patent
• Language: Chinese; English
• Published: 05.08.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The invention discloses an ultraviolet light detector and a preparation method, and relates to an electronic information material and component technology. The detector comprises a NiO layer arranged on the upper surface of a sapphire substrate, wherein a heterojunction region and an electrode region are arranged on the upper surface of the NiO layer; in the heterojunction area, the ZnGa2O4 thin film and NiO form a heterojunction, and an electrode is arranged on the ZnGa2O4 thin film; an electrode directly connected to the NiO layer is provided in the electrode region. The ultraviolet light detector provided by the invention has relatively low dark current and relatively high light response speed, can work under 20V external bias voltage, and has relatively high sensitivity. 紫外光探测器及制备方法，涉及电子信息材料与元器件技术。本发明的探测器包括设置于蓝宝石衬底上表面的NiO层，在NiO层的上表面设置有异质结区域和电极区；在异质结区域，由ZnGa2O4薄膜和NiO构成异质结，且ZnGa2O4薄膜上设置有电极；在电极区，设置有与NiO层直接连接的电极。本发明的紫外光探测器具有较低的暗电流和较快的光响应速度，同时可工作在20V外加偏压下，并且具有较高的灵敏度。