Transistor device and manufacturing method thereof

• Main Authors: SEMENIK ROMAN, MOURI IBRAHIM, SCHULZ HANS-JUERGEN, STORBECK OLAF, SCHLOSSER THOMAS
• Format: Patent
• Language: Chinese; English
• Published: 05.08.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Transistor devices and methods of manufacturing the same are disclosed. A transistor device (10) is presented. An example of a transistor device (10) includes a semiconductor body (100) having a first main surface (101), a second main surface (102) opposite the first main surface (101). The transistor device (10) further includes a transistor cell array (610) including a plurality of transistor cells (TCs). The transistor cell array (610) includes a first load electrode (L1) on the first main surface (101). The first load electrode (L1) is electrically connected to the plurality of transistor cells (TC). The transistor cell array (610) further includes a second load electrode (L2) on the second major surface (102). The second load electrode (L2) is electrically connected to the plurality of transistor cells (TC). The plurality of transistor cells (TC) comprises at least one control electrode (C) comprising carbon. 公开了晶体管器件及其制造方法。提出了一种晶体管器件(10)。晶体管器件(10)的示例包括半导体本体(100)，其具有第一主表面(101)、与第一主表面(101)相对的第二主表面(102)。晶体