Method for directly growing purple phosphorus film on silicon substrate

• Main Authors: XUE YONGHENG, LI SHIJIAO, XUE MIAOXUAN, XIE YADIAN, GAO LANXING, LI YANPU, YU HANQING
• Format: Patent
• Language: Chinese; English
• Published: 29.07.2022
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The invention discloses a method for directly growing a purple phosphorus film on a silicon substrate, which is characterized in that the purple phosphorus film is directly grown on an insulating silicon substrate through epitaxial nucleation design and a vapor phase growth strategy for controlling transverse growth. The method comprises the following steps: by taking red phosphorus as a raw material and iodine and tin as mineralizers, sealing a precursor and a silicon substrate on which a metal (Pt, Pb and Cu) film is deposited in a quartz tube with a certain size in a vacuum or protective atmosphere, and respectively placing the quartz tube in a high-temperature region and a low-temperature region of a tubular furnace; the preparation method comprises the following steps: firstly, heating a high-temperature area of a tubular furnace to 700-800 DEG C, preserving heat for 2-3 hours, and nucleating (Pt3SnP7, Pb3SnP7 and Cu4SnP10) on a substrate; and cooling the high-temperature area to 500-600 DEG C, heating i