Parameter extraction modeling method suitable for discrete device after scribing

The invention relates to a parameter extraction modeling method suitable for a discrete device after scribing. The method comprises the steps that a left side bonding pad, a to-be-tested device after scribing and a right side bonding pad are connected into a GSG on-chip testing structure in a gold w...

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Main Authors DING WUCHANG, ZHANG SHENG, YUAN TINGTING, CHEN XIAOJUAN, WEI KE, LIU XINYU, ZHENG YINGKUI, JIN ZHI, LI YANKUI, LIU GUOGUO
Format Patent
LanguageChinese
English
Published 26.07.2022
Subjects
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
PHYSICS
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Summary:The invention relates to a parameter extraction modeling method suitable for a discrete device after scribing. The method comprises the steps that a left side bonding pad, a to-be-tested device after scribing and a right side bonding pad are connected into a GSG on-chip testing structure in a gold wire bonding mode; capacitive compensation parameters of the left side compensation network and the right side compensation network caused by the left side bonding pad and the right side bonding pad are obtained through measurement; respectively determining inductive compensation parameters of left and right side compensation networks caused by gold wires bonded by gold wires based on the straight-through distances between the left and right side bonding pads and the to-be-tested device; determining S parameters of the left and right side compensation networks according to the inductive compensation parameters and the capacitive compensation parameters of the left and right side compensation networks; and respective
Bibliography:Application Number: CN202110109527