Ag alloy film and Ag alloy sputtering target

• Main Authors: KOMIYAMA, SHOZO, HAYASHI YUJIRO
• Format: Patent
• Language: Chinese; English
• Published: 15.07.2022
• Subjects: ALLOYS; BASIC ELECTRIC ELEMENTS; CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS ANDNON-FERROUS ALLOYS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FERROUS OR NON-FERROUS ALLOYS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TREATMENT OF ALLOYS OR NON-FERROUS METALS

The Ag alloy film is composed of an Ag alloy containing In and Ge, and has an InGe concentrated portion in which In and Ge are concentrated on the surface side. It is preferable that the Ag alloy contains 0.1% by mass or more and 1.5% by mass or less of In and 0.1% by mass or more and 7.5% by mass or less of Ge, with the remainder being Ag and unavoidable impurities. 该Ag合金膜由包含In及Ge的Ag合金构成，在表面侧具有浓集有In及Ge的InGe浓集部。所述Ag合金优选含有0.1质量％以上且1.5质量％以下的In和0.1质量％以上且7.5质量％以下的Ge，并且剩余部分由Ag及不可避免的杂质构成。