Optoelectronic component, semiconductor structure and method

• Main Authors: FEKES FELIX, KLEMP CHRISTOPH, SUNDGREN PETRUS, BIEBERSDORF ANDREAS, ILLEK STEFAN, BERG CHRISTIAN, KANIEFTZA, ANA, PIETZONKA, INES
• Format: Patent
• Language: Chinese; English
• Published: 08.07.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a semiconductor structure comprising an n-doped first layer, a p-doped second layer doped with a first dopant, and an active layer arranged between the n-doped first layer and the p-doped second layer and having at least one quantum well. An active layer of the semiconductor structure is divided into a plurality of first optical active regions, at least one second region, and at least one third region. In this case, a plurality of first optically active regions are arranged at a distance from one another in a hexagonal pattern. The at least one quantum well in the active region has a larger band gap in the at least one second region than in the plurality of first optically active regions and the at least one third region, the band gap being varied, in particular by mixing the quantum wells. The at least one second region surrounds the plurality of first optically active regions. 本发明涉及一种半导体结构，其包括n型掺杂的第一层、掺杂有第一掺杂物的p型掺杂的第二层和布置在n型掺杂的第一层与p型掺杂的第二层之间并且具有至少一个量子阱的有源层。半导体结构的有源层被划分为多个第一光学有源区域、至少