Hybrid low resistance metal wire

• Main Authors: ZHU JOHN JIANHONG, BAO JUNJING, NALLAPATI GIRIDHAR
• Format: Patent
• Language: Chinese; English
• Published: 08.07.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A standard cell for use in semiconductor device design and manufacture and a method for manufacturing a standard cell are disclosed. Aspects disclosed include a standard cell having a plurality of wide metal lines. The wide metal line is formed of copper. The standard cell also includes a plurality of narrow metal lines. The narrow metal wire is formed of a material having a lower resistance than copper for a wire width of a magnitude of 12 nm or less. 公开了在半导体器件设计和制造中使用的标准单元和用于制造标准单元的方法。所公开的各方面包括具有多条宽金属线的标准单元。宽金属线由铜形成。标准单元也包括多条窄金属线。对于12nm或更小的量级的线宽，该窄金属线由具有比铜更低的电阻的材料形成。