DEPOSITION SYSTEM AND TREATMENT SYSTEM

• Main Authors: KIM HYUN-JOON, PARK YOUNG-LIM, KIM SOO-HWAN, BAEK DONG-KWAN, JUNG HYUNGSUK
• Format: Patent
• Language: Chinese; English
• Published: 08.07.2022
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A deposition system according to an embodiment of the present invention comprises: a reaction chamber; a gas supply unit for supplying a gaseous precursor to the reaction chamber; a reactant supply unit for supplying a reactant that reacts with the precursor to the reaction chamber; and a discharge unit for discharging emissions from the reaction chamber, in which: the gas supply unit comprises a sub-tank, a liquid flow controller, and an evaporator connected in sequence; the precursor is filled in a liquid state into the sub-tank of the gas supply unit by means of an automatic filling system and is supplied to the reaction chamber via the sub-tank, the liquid flow controller and the evaporator; and the discharge unit includes a treatment process chamber to which the plasma pretreatment system is applied, a pump, and a scrubber, thereby stably supplying the precursor without replacing the tank, improving the life of the pump, and improving the efficiency of the scrubber. Therefore, by using the deposition sys