SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM INCLUDING SAME

• Main Author: CHANG SOO-BONG
• Format: Patent
• Language: Chinese; English
• Published: 08.07.2022
• Subjects: ELECTRICITY; INFORMATION STORAGE; PHYSICS; STATIC STORES

The invention discloses a semiconductor memory device and a memory system including the same. The semiconductor memory device includes a first memory cell array and a second memory cell array spaced apart from each other in a first direction; a plurality of column selection transistors spaced apart from each other in a second direction crossing the first direction between the first memory cell array and the second memory cell array, at least two of the plurality of column selection transistors including respective portions of a center gate pattern, a center gate pattern crossing a center line extending in the first direction at a center of the first memory cell array and having a closed loop shape; and a first local input/output line and a second local input/output line configured to supply a potential through the first memory cell array to the local sense amplifier based on an operation of the column selection transistor. 公开了半导体存储器装置和包括半导体存储器装置的存储器系统。所述半导体存储器装置包括：第一存储器单元阵列和第二存储器单元阵列，沿第一方向彼此间隔开；多个列选择晶体管，在第一存储