Modeling method and computing system for sub-circuit model of semiconductor device

The invention discloses a modeling method and a computing system for a sub-circuit model of a semiconductor device, and the modeling method comprises the steps: building a black box model which comprises a plurality of interfaces, and arranging a diode between any two adjacent interfaces in the plur...

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Bibliographic Details
Main Author JIANG SHENGFENG
Format Patent
LanguageChinese
English
Published 05.07.2022
Subjects
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
PHYSICS
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Summary:The invention discloses a modeling method and a computing system for a sub-circuit model of a semiconductor device, and the modeling method comprises the steps: building a black box model which comprises a plurality of interfaces, and arranging a diode between any two adjacent interfaces in the plurality of interfaces; connecting the black box model to a standard BSIM4 model to generate a sub-circuit model; and representing the breakdown effect and/or punch-through effect of the semiconductor device by adopting the sub-circuit model. The built sub-circuit model not only has convergence, compatibility and high simulation speed of a BSIM4 model, but also comprises the black box model capable of representing the breakdown effect and punch-through effect of the device, and the modeling speed and modeling accuracy of the semiconductor device can be improved. 本发明公开了一种半导体器件的子电路模型的建模方法及计算系统，该建模方法包括：建立黑盒模型，黑盒模型包括多个接口，且多个接口中的任意相邻两个接口之间设置有二极管；将黑盒模型连接在标准BSIM4模型上，生成子电路模型；以及采用子电路模型表征半导体器件的击穿效应和/或穿通效应。本发明所构建的子电路模型不仅具有BSIM4模
Bibliography:Application Number: CN202111330977