Multiphase growth sequence for forming vertical cavity surface emitting lasers

• Main Authors: ZHAO GUOWEI, BARVE AJIT VIJAY, PETERS MATTHEW GLENN, YANG JUN
• Format: Patent
• Language: Chinese; English
• Published: 01.07.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DEVICES USING STIMULATED EMISSION; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A method of forming a vertical cavity surface emitting laser (VCSEL) device using a multiphase growth sequence includes forming a first mirror on a substrate; forming an active region (e.g., a dilute nitride active region) on the first mirror; forming an oxidation hole (OA) layer on the active region; forming a spacer on the surface of the OA layer; and forming a second mirror on the spacer. In a molecular beam epitaxy stage of the multiphase growth sequence, the active region is formed using a molecular beam epitaxy (MBE) process, and in a metal organic chemical vapor deposition (MOCVD) stage of the multiphase growth sequence, the second mirror is formed using a metal organic chemical vapor deposition process. 一种使用多相生长序列形成垂直腔面发射激光器(VCSEL)装置的方法，包括：在基板上形成第一反射镜；在第一反射镜上形成有源区(例如，稀氮化物有源区)；在有源区上形成氧化孔(OA)层；在所述OA层的表面上形成间隔物；以及在间隔物上形成第二反射镜。在多相生长序列的分子束外延阶段，使用分子束外延(MBE)工艺形成有源区，在多相生长序列的金属有机化学气相沉积(MOCVD)阶段，使用金属有机化学气相沉积工艺形成第二反射镜。