Passivation layer measuring structure and method

• Main Authors: NING DIANHUA, LIU YONGSHENG, JIANG SHENG, HUANG XIAOLEI, LI HEQIN
• Format: Patent
• Language: Chinese; English
• Published: 24.06.2022
• Subjects: ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVEREDIN A SINGLE OTHER SUBCLASS; BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MEASURING; MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR; PHYSICS; SEMICONDUCTOR DEVICES; TARIFF METERING APPARATUS; TESTING

The invention discloses a passivation layer measuring structure and method, the measuring structure comprises an epitaxial structure, a plurality of metal layers and a plurality of passivation layers, the metal layers and the passivation layers are located on the epitaxial structure and distributed in a staggered mode, and a parallel-plate capacitor is formed by the stacked part of every two metal layers and the passivation layer between the two metal layers. And the thicknesses of the passivation layers in different parallel plate capacitors are different. The metal layer and the passivation layer in the measurement structure can form a plurality of parallel-plate capacitors, the measurement method is simple and easy to operate, the measurement structure can be compatible with most GaN HEMT technological processes, and parameters such as the thickness, the dielectric constant, the withstand voltage and the electric leakage of the passivation layer can be obtained by measuring capacitance parameters or curren