Preparation method of Co9S8 single crystal transition metal sulfide film
The invention belongs to the field of pulse laser deposition technology and transition metal sulfide film preparation, and particularly provides a preparation method of a Co9S8 single crystal transition metal sulfide film, which is used for obtaining a high-quality epitaxial sulfide film. The Co9S8...
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Main Authors | , , , |
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Format | Patent |
Language | Chinese English |
Published |
21.06.2022
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Subjects | |
Online Access | Get full text |
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Summary: | The invention belongs to the field of pulse laser deposition technology and transition metal sulfide film preparation, and particularly provides a preparation method of a Co9S8 single crystal transition metal sulfide film, which is used for obtaining a high-quality epitaxial sulfide film. The Co9S8 single-crystal epitaxial film is prepared for the first time through CoS target material preparation and deposition parameter accurate design by utilizing a pulse laser deposition method, and compared with Co9S8 powder or blocks, the Co9S8 single-crystal epitaxial film can have better physical properties, and compared with an existing transition metal sulfide film, the Co9S8 single-crystal epitaxial film has the advantages that the performance of the Co9S8 single-crystal epitaxial film is improved, and the performance of the Co9S8 single-crystal epitaxial film is improved. The Co9S8 single crystal epitaxial thin film has the advantages of high crystal quality, relatively thin thickness and good electric transport p |
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Bibliography: | Application Number: CN202210300347 |