Preparation method of Co9S8 single crystal transition metal sulfide film

• Main Authors: GAO YUNCHONG, TAO SIXU, ZHOU XIANGYIN, QIAO LIANG
• Format: Patent
• Language: Chinese; English
• Published: 21.06.2022
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention belongs to the field of pulse laser deposition technology and transition metal sulfide film preparation, and particularly provides a preparation method of a Co9S8 single crystal transition metal sulfide film, which is used for obtaining a high-quality epitaxial sulfide film. The Co9S8 single-crystal epitaxial film is prepared for the first time through CoS target material preparation and deposition parameter accurate design by utilizing a pulse laser deposition method, and compared with Co9S8 powder or blocks, the Co9S8 single-crystal epitaxial film can have better physical properties, and compared with an existing transition metal sulfide film, the Co9S8 single-crystal epitaxial film has the advantages that the performance of the Co9S8 single-crystal epitaxial film is improved, and the performance of the Co9S8 single-crystal epitaxial film is improved. The Co9S8 single crystal epitaxial thin film has the advantages of high crystal quality, relatively thin thickness and good electric transport p