Computing corrected read voltage offset in non-volatile random access memory

• Main Authors: TOMIC SASA, STOICA, ROBERTO, IOANNOU NIKOLAS, PAPANDREOU NIKOLAOS, FISCHER THOMAS, FREY ANNIKA, PLETKA ROMAN, POZIDIS, CHARALAMPOS
• Format: Patent
• Language: Chinese; English
• Published: 14.06.2022
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

According to one method, a computer-implemented method is used to calibrate a read voltage of a memory block. The computer-implemented method includes determining a current operating state of a block including one or more word lines therein, and wherein one or more read voltages are associated with each of the word lines. Further, for each of the word lines in the block: one of the read voltages associated with a given word line is selected as a reference read voltage, and an absolute shift value of the reference read voltage is calculated. A relative shift value is determined for each of the remaining read voltages associated with the given word line, where the relative shift value is determined relative to the reference read voltage. Further, each of the read voltages associated with a given word line is adjusted using each of the absolute shift value and the corresponding relative shift value. 根据一种方法，一种计算机实现的方法用于校准存储器块的读取电压。该计算机实现的方法包括：确定其中包括一个以上字线的块的当前操作状态，并且其中一个以上读取电压与所述字线中的每一个相关联。此外，对于块中的字线中的每一个：选择与给定字线