SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

• Main Authors: SUZUKI KENJI, MINAMITAKE HARUHIKO, KOKETSU HIDENORI, KIYOI AKIRA, HARAGUCHI YUKI, YOSHIDA TAKUYA, HOSHI TAIKI, MIYATA YUSUKE
• Format: Patent
• Language: Chinese; English
• Published: 07.06.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The purpose of the present invention is to provide a semiconductor device capable of easily improving gate withstand voltage, and a method for manufacturing the same. This semiconductor device is provided with: a silicon substrate of a first conductivity type having a cell part and a terminal part surrounding the cell part in plan view; an emitter layer of a first conductivity type provided on the surface of the silicon substrate of the cell portion; a collector layer of a second conductivity type provided on the rear surface of the silicon substrate of the cell portion; a first conductivity type drift layer provided between the emitter layer and the collector layer; a trench gate provided so as to reach the drift layer from the surface of the emitter layer; and a well layer of a second conductivity type, which is provided on the surface of the silicon substrate at the terminal portion, and in which the number of vacancies included in the crystal defect at the cell portion is less than the number of vacancies