Light emitting diode

• Main Authors: ZHANG JIAHAO, TANG HONGBIN, WU JIPU, ZHANG ZHONGYING, LIAO QIHUA, DENG YOUCAI, QIU SHUTIAN
• Format: Patent
• Language: Chinese; English
• Published: 03.06.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A light emitting diode, comprising: a composite insulating reflective layer (100) comprising a plurality of dielectric pairs; at least one of the dielectric pairs includes a first material layer (110) having a first refractive index, a second material layer (120) having a second refractive index, and a stress buffer layer (130) located therebetween, the first refractive index being greater than the second refractive index. The buffer layer (130) is used to reduce the manufacturing stress of the reflective film layer, and the manufacturing yield of the chip process is improved. 一种发光二极管，包含：复合绝缘反射层（100）包括多个电介质对；至少其中一个电介质对包括具有第一折射率的第一材料层（110）、具有第二折射率的第二材料层（120）和位于二者之间的应力缓冲层（130），第一折射率大于第二折射率。利用缓冲层（130）降低反射膜层的制作应力，提供芯片工艺制作良率。