High-purity germanium single crystal Hall test sample wafer and method for preparing high-purity germanium single crystal Hall test sample wafer by adopting zone melting method

• Main Authors: CHAI CHEN, MIN ZHENDONG, MA YUANFEI, ZHANG HAITAO, GUO WEICAI, XING JUN, WANG BO, LIN QUAN, ZHANG ZHENYUN
• Format: Patent
• Language: Chinese; English
• Published: 03.06.2022
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; METALLURGY; PHYSICS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; TESTING; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention provides a high-purity germanium single-crystal Hall test sample wafer and a method for preparing the high-purity germanium single-crystal Hall test sample wafer by adopting a zone melting method. The method comprises the following steps: placing single-crystal germanium seed crystals and polycrystalline germanium ingots at a distance of 2-5mm; carrying out fusion welding under protective gas, and keeping the temperature constant for a certain time before fusion welding until complete fusion welding; and after complete welding, carrying out heat preservation for 10-20 minutes, and then moving to obtain the zone-melting germanium single crystal, and finally, manufacturing a Hall test sample. According to the method, the germanium single crystal in the same environment as the zone-melting polycrystal can be grown, and then the zone-melting germanium single crystal is used for manufacturing the ohmic electrode and obtaining the Hall test sample, so that the purity of the zone-melting polycrystal ge