High-purity germanium single crystal Hall test sample wafer and method for preparing high-purity germanium single crystal Hall test sample wafer by adopting zone melting method
The invention provides a high-purity germanium single-crystal Hall test sample wafer and a method for preparing the high-purity germanium single-crystal Hall test sample wafer by adopting a zone melting method. The method comprises the following steps: placing single-crystal germanium seed crystals...
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Main Authors | , , , , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
03.06.2022
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Subjects | |
Online Access | Get full text |
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Summary: | The invention provides a high-purity germanium single-crystal Hall test sample wafer and a method for preparing the high-purity germanium single-crystal Hall test sample wafer by adopting a zone melting method. The method comprises the following steps: placing single-crystal germanium seed crystals and polycrystalline germanium ingots at a distance of 2-5mm; carrying out fusion welding under protective gas, and keeping the temperature constant for a certain time before fusion welding until complete fusion welding; and after complete welding, carrying out heat preservation for 10-20 minutes, and then moving to obtain the zone-melting germanium single crystal, and finally, manufacturing a Hall test sample. According to the method, the germanium single crystal in the same environment as the zone-melting polycrystal can be grown, and then the zone-melting germanium single crystal is used for manufacturing the ohmic electrode and obtaining the Hall test sample, so that the purity of the zone-melting polycrystal ge |
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Bibliography: | Application Number: CN202210051279 |